Ultralow k

Background

The speed of highly integrated and high density semiconductors that improve beyond Moore's Law depends on not by the switching speed of transistors but by RC Delay caused by copper interconnects.
In addition, in order to reduce power consumption at the interconnect level, which consists of 90% of semiconductor structure, the semiconductor industry has been looking for next generation interlayer dielectric materials that have low dielectric constant (k) and strong mechanical properties(>5 GPa) with extendibility for future technology nodes.

Problem

In 2004, ITRS (International Technology Roadmap for Semiconductor) stated that development of Ultralow interlayer dielectric materials with k < 2.2 is urgent but there are no companies or research labs that have succeeded to develop it until 2018.
The problem is that if the pores are introduced to materials to lower the dielectric constant, the mechanical strength would decrease drastically.

Solution

MIDAS MATERIALS’ ULK has dielectric constant(k)< 2.0 and Modulus > 7 GPa and we develop ULK utilizing the spin-on deposition method. Therefore, our ULK is much more economical in terms of production costs compare to CVD and is scalable as the technologynodes extend.